elektronische bauelemente stt6405 -5.0 a, -30 v, r ds(on) 50 m ? p-channel enhancement mode mos.fet 28-oct-2009 rev. b page 1 of 3 b l f h c j d g k a e 6 4 0 5 d d g d d s = date code 6 1 3 2 5 4 rohs compliant product a suffix of -c specifies halogen and lead-free description the stt6405 uses advanced trench technology to provide excellent on-resistance with low gate ch ange. the device is suitable for use as a load switch or in pwm applications. features p-channel lower gate charge small footprint & low profile package marking code absolute maximum ratings parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain current 3 i d @t a =25 i d @t a =70 -5.0 -4.2 a pulsed drain current 1 i dm -20 a power dissipation p d @t a =25 2 w linear derating factor 0.016 w/ operating junction and storage temperature range t j , t stg -55 ~ +150 thermal resistance- junction to ambient 3 max. r ja 62.5 / w electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min typ max unit test conditions drain-source breakdown voltage bv dss -30 - - v v gs = 0, i d = -250 a gate threshold voltage v gs(th) -1.0 - -3.0 v v ds = v gs , i d = -250 a forward transconductance g fs - 8.6 - s v ds = -5v, i d = -5.0a gate-source leakage current i gss - - 100 na v gs = 20 v drain-source leakage current (tj=25 ) - - -1 v ds = -30 v, v gs = 0 drain-source leakage current (tj=55 ) i dss - - -5 a v ds = -24 v, v gs = 0 - - 50 v gs = -10 v, i d = -5.0 a static drain-source on-resistance 2 r ds(on) 75 m v gs = -4.5 v, i d = -4.0 a total gate charge 2 q g - 14.7 18 gate-source charge q gs - 2 - gate-drain (miller) charge q gd - 3.8 - nc i d = -5.0 a v ds = -15 v v gs = -10 v turn-on delay time 2 t d(on) - 8.3 - rise time t r - 5 - turn-off delay time t d(off) - 29 - fall time t f - 14 - ns v ds = -15 v v gs = -10 v r g = 3 r l = 3 input capacitance c iss - 700 840 output capacitance c oss - 120 - reverse transfer capacitance c rss - 75 - pf v gs = 0 v v ds = -15 v f = 1.0 mhz gate resistance r g - 10 - f=1.0 mhz source-drain diode forward on voltage 2 v sd - - -1.0 v i s = -1.0 a, v gs = 0 v reverse recovery time 2 t rr - 23.5 - ns reverse recovery charge q rr - 13.4 - nc i s = -5.0a, v gs =0v, dl/dt= 100a/ s notes: 1. pulse width limited by max. junction temp erature. 2. pulse width Q 300 s, duty cycle Q 2%. 3. surface mounted on 1 in 2 copper pad of fr4 board; 156 /w when mounted on min. copper pad. millimeter millimeter ref. m in. max. ref. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d 1.10 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50 3 gate 4 source drain 1256 78 tsop-6
elektronische bauelemente stt6405 -5.0 a, -30 v, r ds(on) 50 m ? p-channel enhancement mode mos.fet 28-oct-2009 rev. b page 2 of 3 characteristic curves
elektronische bauelemente stt6405 -5.0 a, -30 v, r ds(on) 50 m ? p-channel enhancement mode mos.fet 28-oct-2009 rev. b page 3 of 3 characteristic curves
|
